mar. 2004 g2 g1 e2 e1 c1 e2 c2e1 label tab #110. t=0.5 14 14 14 (20.5) 21.5 25 25 6 15 6 4 18 7 18 7 18 30 29 +1.0 ?.5 8.5 21.2 93 0.25 110 62 0.25 80 3-m6 nuts 4- 6.5 mounting holes c2e1 e2 e2 g2 g1 e1 c1 circuit diagram CM600DY-24A application ac drive inverters & servo controls, etc mitsubishi igbt modules CM600DY-24A high power switching use ? i c ................................................................... 600a ? v ces ......................................................... 1200v ? insulated type ? 2-elements in a pack outline drawing & circuit diagram dimensions in mm CM600DY-24A 04.2.19, 9:21 pm page 1 adobe pagemaker 6.5j/ppc
mar. 2004 v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 600v, i c = 600a, v ge = 15v v cc = 600v, i c = 600a v ge1 = v ge2 = 15v r g = 0.52 ? , inductive load switching operation i e = 600a i e = 600a, v ge = 0v igbt part (1/2 module) *1 fwdi part (1/2 module) *1 case to fin, thermal compound applied (1/2 module) *2 i c = 60ma, v ce = 10v i c = 600a, v ge = 15v v ce = 10v v ge = 0v 1200 20 600 1200 600 1200 3670 ?0 ~ +150 ?0 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 mitsubishi igbt modules CM600DY-24A high power switching use v v a a w c c v n ?m g 1 0.5 3.0 94 8 1.8 660 190 700 350 250 3.8 0.034 0.062 7.8 ma a nf nc ns c v c/w ? 2.1 2.4 2700 19 0.018 0.52 7v v 68 ns i ces i ges c ies c oes c res q g t d(on) t r t d(off) t f t rr ( note 1 ) q rr ( note 1 ) v ec( note 1 ) r th(j-c) q r th(j-c) r r th(c-f) r g symbol parameter v ge(th) v ce(sat) * 1 : tc, tf measured point is just under the chips. * 2 : typical value is measured by using shin-etsu silicone ?-746? note 1. i e , v ec , t rr & q rr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (fwdi). 2. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 3. junction temperature (t j ) should not increase beyond 150 c. collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage weight g-e short c-e short dc, t c = 78 c *1 pulse (note 2) pulse (note 2) t c = 25 c *1 main terminal to base plate, ac 1 min. main terminal m6 mounting holes m6 typical value symbol parameter collector current emitter current torque strength conditions unit ratings v ces v ges i c i cm i e ( note 1 ) i em ( note 1 ) p c ( note 3 ) t j t stg v iso unit typ. limits min. max. test conditions electrical characteristics (tj = 25 c) absolute maximum ratings (tj = 25 c) collector cutoff current gate-emitter threshold voltage gate leakage current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time reverse recovery time reverse recovery charge emitter-collector voltage contact thermal resistance external gate resistance thermal resistance CM600DY-24A 04.2.19, 9:21 pm page 2 adobe pagemaker 6.5j/ppc
mar. 2004 mitsubishi igbt modules CM600DY-24A high power switching use 1200 1000 400 200 800 600 0 046810 output characteristics (typical) collector current i c (a) collector-emitter voltage v ce (v) t j = 25 c 11 12 10 9 v ge = 20v 2 15 13 4 3 2 1 0 0 400 1200 800 1000 600 collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) v ge = 15v t j = 25 c t j = 125 c 200 10 8 6 4 2 0 20 12 14 6 8 10 16 18 gate-emitter voltage v ge (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) t j = 25 c i c = 1200a i c = 240a i c = 600a 2 3 5 7 2 3 5 7 2 3 5 7 012 4 35 free-wheel diode forward characteristics (typical) emitter current i e (a) emitter-collector voltage v ec (v) t j = 25 c t j = 125 c 10 1 10 1 10 0 10 1 10 2 10 3 2 3 5 7 7 7 2 3 5 2 3 5 2 3 5 7 2 10 0 357 2 10 1 357 2 10 2 357 capacitance? ce characteristics (typical) capacitance c ies , c oes , c res (nf) collector-emitter voltage v ce (v) c ies c oes c res v ge = 0v 10 1 10 2 10 3 2 3 5 7 2 3 5 7 10 1 10 2 10 3 10 4 10 1 10 2 57 10 3 23 57 23 half-bridge switching characteristics (typical) switching time (ns) collector current i c (a) conditions: v cc = 600v v ge = 15v r g = 0.52 ? t j = 125 c inductive load t d(off) t d(on) t f t r performance curves CM600DY-24A 04.2.19, 9:21 pm page 3 adobe pagemaker 6.5j/ppc
mar. 2004 mitsubishi igbt modules CM600DY-24A high power switching use 10 1 10 2 23 57 10 3 23 57 10 1 10 2 2 3 5 7 10 3 2 3 5 7 t rr i rr reverse recovery characteristics of free-wheel diode (typical) emitter current i e (a) reverse recovery time t rr (ns) reverse recovery current l rr (a) conditions: v cc = 600v v ge = 15v r g = 0.52 ? t j = 25 c inductive load 10 3 10 2 10 1 10 5 10 4 10 0 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 3 23 57 23 57 23 57 23 57 10 1 10 2 10 1 10 0 10 3 10 3 7 5 3 2 10 2 7 5 3 2 10 1 23 57 23 57 single pulse t c = 25 c under the chip transient thermal impedance characteristics (igbt part & fwdi part) normalized transient thermal impedance z th (j c ) (ratio) time (s) igbt part: per unit base = r th(j c) = 0.034 c/ w fwdi part: per unit base = r th(j c) = 0.062 c/ w 10 0 2 3 5 7 2 3 5 7 10 1 10 2 57 10 3 23 57 23 recovery loss vs. i e (typical) recovery loss (mj/pulse) emitter current i e (a) conditions: v cc = 600v v ge = 15v r g = 0.52 ? t j = 125 c inductive load c snubber at bus err 10 3 10 2 10 1 2 3 5 7 2 3 5 7 10 1 10 2 57 10 3 23 57 23 switching loss vs. collector current (typical) switching loss (mj/pulse) collector current i c (a) conditions: v cc = 600v v ge = 15v r g = 0.52 ? t j = 125 c inductive load c snubber at bus esw(off) esw(on) 10 2 10 1 10 0 2 3 5 7 2 3 5 7 10 1 10 0 57 10 1 23 57 23 recovery loss vs. gate resistance (typical) recovery loss (mj/pulse) gate resistance r g ( ? ) conditions: v cc = 600v v ge = 15v i e = 600a t j = 125 c inductive load c snubber at bus err 10 3 10 2 10 1 2 3 5 7 2 3 5 7 10 1 10 0 10 1 23 57 switching loss vs. gate resistance (typical) switching loss (mj/pulse) gate resistance r g ( ? ) conditions: v cc = 600v v ge = 15v i c = 600a t j = 125 c inductive load c snubber at bus esw(on) esw(off) 57 23 CM600DY-24A 04.2.19, 9:21 pm page 4 adobe pagemaker 6.5j/ppc
mar. 2004 mitsubishi igbt modules CM600DY-24A high power switching use 0 4 8 16 12 20 0 2000 1000 4000 3000 1500 500 3500 2500 gate charge characteristics (typical) gate-emitter voltage v ge (v) gate charge q g (nc) v cc = 600v v cc = 400v i c = 600a CM600DY-24A 04.2.19, 9:21 pm page 5 adobe pagemaker 6.5j/ppc
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